Technology node Year of Key Innovations Application note introduction 180nm 2000 Cu interconnect, MOS options, 6 metal layers 130nm 2002 Low-k dielectric, 8 metal layers 90nm 2003 SOI substrate 65nm 2004 Strain silicon 45nm nd generation strain, 10 metal layers 32nm 2010 High-K metal gate 20nm 2013 Replacement metal gate, Double patterning, 12 metal layers 14nm 2015 FinFET 10nm 2017 FinFET, double patterning 7nm 2019 FinFET, quadruple patterning This application note 5nm 2021 Multi-bridge FET Table 1: Most significant technology nodes over the past 15 years Improved performances The power, performance and area gains are an important metric for justifying a shift from older technology nodes to new ones. Technology Roadmap Several companies and research centers have released details on the 7-nm CMOS technology, as a major step for improved integration and performances, with the target of 4-nm process by We recall in table 1 the main innovations over the past recent years. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed. New concepts related to the design of FinFET and design for manufacturing are also described. 1 Introducing 7-nm FinFET technology in Microwind Etienne SICARD Professor INSA-Dgei, 135 Av de Rangueil Toulouse France This paper describes the implementation of a high performance FinFET-based 7-nm CMOS Technology in Microwind.
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